Monolayer Graphene on Si3N4 (10 mm x 10 mm) - Pack 4 units GFET

Monolayer Graphene on Si3N4 (10 mm x 10 mm) - Pack 4 units GFETMonolayer Graphene film on Si3N4 (10 mm x 10 mm) Processed in ISO 7 Cleanroom Monolayer Graphene produced by CVD on copper catalyst and transferred to a Si3N4 substrate using wet transfer process. This product is ideal for R&D departments and universities. Graphene Film Transparency: > 97 % Coverage: > 95% Polymer assisted transfer Thickness (theoretical): 0. 345 nm Hall Electron Mobility on Si3N4: 1432428 cm2 Vs Sheet Resistance: 576172 Ohms sq (1cm

· Transparent conductors in OLEDs

and the probe pads located near the periphery of the chip

Highly Flexible

· Resistivity of Si substrate: 1-10 Ω

· Electrical conductivity on test structures

· Encapsulation: 50 nm Al2O3

"Graphene Sensor Arrays for Rapid and Accurate Detection of Pancreatic Cancer Exosomes in Patients’ Blood Plasma Samples"

· Graphene transistors and electronic applications

· Sheet Resistance on Quartz: 360±50 Ohms/sq (1cm x1cm)

· Color: Transparent

· Color: Black

· Specific Surface Area: 423 – 498 m2/g